Title (en)
Electron-beam manipulation of group V dopants in silicon
Language
Not applicable
Description (en)
Supplementary open data for article "Mechanism of electron-beam manipulation of single dopant atoms in silicon" (doi:https://doi.org/10.1021/acs.jpcc.1c03549), containing: raw HAADF/STEM data of Bi split vacancy structure in Si; and density functional theory molecular dynamics (MD) trajectories of the indirect exchange process for Bi and Sb; thermal MD of split vacancy vacancy structures for As and P; and relaxed split vacancy structures for Bi, Sb, As, and P.
Keywords (en)
first principles modelingdensity functional theory silicondopantsmaterials sciencescanning transmission electron microscopy
DOI
10.25365/phaidra.275
Author of the digital object
Toma Susi  (University of Vienna)
Format
application/zip
Size
4.0 MB
Installation Guide (en)
See individual items in the collection.
ÖFOS 2012
Materials physics
ÖFOS 2012
Radiation physics
ÖFOS 2012
Electron microscopy
ÖFOS 2012
Condensed matter
Organization Association
Faculty of Physics > Physics of Nanostructured Materials
Members (4)