Title
Electron-beam manipulation of group V dopants in silicon
Description (en)
Supplementary open data for article "Mechanism of electron-beam manipulation of
single dopant atoms in silicon" (doi:https://doi.org/10.1021/acs.jpcc.1c03549), containing: raw HAADF/STEM data of Bi split vacancy structure in Si; and density functional theory molecular dynamics (MD) trajectories of the indirect exchange process for Bi and Sb; thermal MD of split vacancy vacancy structures for As and P; and relaxed split vacancy structures for Bi, Sb, As, and P.
Keywords (en)
first principles modeling
Keywords (en)
density functional theory
Keywords (en)
materials science
Keywords (en)
scanning transmission electron microscopy